Samsung announces that it has designed and developed the industry’s first 512GB DDR5 DRAM module. For its power efficiency, the company has applied HKMG technology, traditionally used in processors.
Samsung has announced that it has developed the industry’s first 512GB DDR5 memory module using through-silicon via (TSV) technology. With the help of TSV approach – which is helpful for interconnecting 3D-stacked silicon chips -, Samsung will be stacking eight layers of 16Gb DRAM chips to offer up to 512GB capacity on a single module.
