SK hynix has announced today its latest 1anm DRAM node, the company’s fourth-gen 10nm memory process. The 1anm node is produced utilizing EUV tech and enables faster and more efficient DRAM chips.
Leading DRAM chip designer and manufacturer SK hynix has announced today the next evolution of memory chip making using Extreme ultraviolet (EUV) equipment. Using this technology, the company will be able to mass-produce the latest fourth-generation of 10nm DRAM products which are more densely packed than last-gen process.
