China has developed a new flash memory technology called “Poxiao” and it is said to be a million times faster than USB drives.
Shanghai-based researchers from Fudan University have achieved a breakthrough in semiconductor technology by developing a picosecond-level flash memory device. This device is said to boast an impressive access speed of 400 picoseconds (or 0.4 nanoseconds), equivalent to operating 25 billion times per second. The research team has named this innovation “PoX”, which is now considered the fastest semiconductor charge storage device known to date.
The findings were published in the journal Nature on Wednesday. According to Zhou Peng, a leading scientist on the project and researcher at the State Key Laboratory of Integrated Chips and Systems, “This is like the device working 1 billion times in the blink of an eye, while a U disk (a USB flash drive) can only work 1,000 times. The previous world record for similar technology was 2 million.
