Could pave the way for high-density 3D vertical memory and AI systems
A revolutionary new memory device that combines the features of DRAM and NAND flash memory is being developed by a group of researchers at the Korea Advanced Institute of Science and Technology (KAIST).
Led by Professor Shinhyun Choi of the School of Electrical Engineering, the team’s breakthrough promises cheaper, power-efficient solutions that could potentially replace existing memory solutions or be used to implement neuromorphic computing for the next-generation of AI hardware.
According to KAIST, the new device utilizes next-generation phase change memory with ultra-low power consumption, capable of replacing both DRAM and NAND flash memory.Taking a novel approach
Typically, DRAM offers high-speed performance but is volatile, resulting in data loss when power is shut down. NAND flash memory offers a solution by preserving data even when the power is off, but it does not match the speed of DRAM.
