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Samsung outlined its foundry business roadmap for the next five years at its Foundry Forum event last week. The company plans to introduce its next generation fabrication technologies in a timely manner and intends to make chips on its 1.4 nm (14 angstroms) manufacturing process by 2027. Also, the company will keep investing in new manufacturing capacity going forward as it strives to strengthen its position in the foundry market.
Samsung has been introducing new production nodes and/or variants on production nodes every 12 – 18 months for several years now, and plans to keep its rather aggressive pace going forward. Though the company’s roadmap illustrates, fanfare aside, that it is now taking longer to develop new fabrication processes. The company’s second-generation 3 nm-class gate-all-around (3GAP) technology is now set to arrive sometime in 2024. Meanwhile, Samsung Foundry intends to be ready with its 2 nm (20 angstroms) node in 2025, and with its 1.4 nm-branded fabrication process in 2027.
„With the company’s success of bringing the latest [3 nm-class] process technology to mass production, Samsung will be further enhancing gate-all-around (GAA) based technology and plans to introduce the 2 nm process in 2025 and 1.4 nm process in 2027,“ a statement by Samsung reads.
Painting some very broad strokes, compared to those of Intel and TSMC, it seems like TSMC is a little bit more conservative (which is something expected when you are the world’s largest contrast maker of microelectronics). Whereas Intel is more aggressive (which is again expected given the company’s position in the market of semiconductors).
