News, Reviews & Betas which includes large community peer support Samsung has made a breakthrough in increasing the resistivity of MRAM. This makes it a more viable option for in-memory processing and could be used in next-generation artificial intelligence chips.
Samsung has demonstrated the world’s first in-memory computing based on Magnetoresistive Random Access Memory (MRAM). So far, MRAM has been difficult to utilise due to low resistance which makes it more power-hungry than other technologies.
