SK hynix sets the stage for rapid and capacious new SSDs with ‘world’s first’ 238-layer 512Gb 4D NAND flash.
SK hynix has developed new 4D NAND flash with a huge 238 layers, paving the way for rapid and capacious new SSDs, the company has announced.
Unveiled on stage at Flash Memory Summit in Santa Clara, the new memory chip is described as the “world’s first 238-layer 512Gb TLC 4D NAND” and is expected to enter mass production in the first half of 2023.
Compared with the previous 176-layer model, the new NAND is said to offer 50% faster data transfer speeds (at 2.4Gb/sec), 21% greater energy efficiency for data reads and a 34% increase in overall productivity.
The arrival of the 238-layer product will see SK hynix snatch the record for world’s highest NAND stack from rival manufacturer Micron, whose latest model features a measly 232 layers.
