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Samsung begins production of 14nm EUV DDR5 DRAM, unlocks speeds of up to 7.2 Gbps

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Taking advantage of the latest DDR5 standard, Samsung says its 14nm DRAM will help unlock « unprecedented speeds » of up to 7.2 gigabits per second. Comparatively, it’s more…
Something to look forward to: Samsung has announced that it’s begun mass producing 14-nanometer (nm) DRAM, the industry’s smallest, that will be formed on extreme ultraviolet (EUV) technology. The number of EUV layers has been increased to five to « deliver today’s finest, most advanced DRAM process for its DDR5 solutions. » Taking advantage of the latest DDR5 standard, Samsung says its 14nm DRAM will help unlock « unprecedented speeds » of up to 7.2 gigabits per second. Comparatively, it’s more than twice the speed of DDR4 of up to 3.2Gbps. Due to applying five EUV layers — a process that enables the industry’s highest DRAM bit density — Samsung will increase overall wafer productivity by around 20 percent.

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