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Samsung Unveils Next-Generation UFS 4.0 Storage With 46 Percent Power-Efficiency, and 2x the Bandwidth of UFS 3.1 Standard

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Samsung has officially unveiled its UFS 4.0 storage standard, and it brings a boatload of improvements over the current UFS 3.1 standard
Samsung has decided to push the boundaries of internal storage that will be used in future products with the unveiling of the UFS 4.0 standard. It brings notable improvements over the current-generation UFS 3.1 standard, so let us discuss those in more detail. Samsung’s UFS 4.0 storage uses the Korean manufacturer’s Gen 7 V-NAND flash memory and paired with the company’s proprietary controller, the new standard can achieve sequential read speeds of up to 4,200MB/s. Those read speeds are higher than what the PCIe NVMe 3.0 standard can achieve, and on top of that, UFS 4.

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